Growth of high quality InGaAsN heterostructures and their laser application

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 545-552

  Egorov, A Yu ^a   Bernklau, D ^a   Borchert, B ^a   Illek, S ^a   Livshits, D ^b   Rucki, A ^c   Schuster, M ^c   Kaschner, A ^d   Hoffmann, A ^d   Dumitras, Gh ^e   Amann, M C ^f   Riechert, H ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c SIEMENS AG   (Germany)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^e TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^f WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

B1. Nitrides; B2. Semiconducting gallium arsenide; B3. Laser diodes

Indexed keywords

ANNEALING; CURRENT DENSITY; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS;

SOLID-SOURCE MOLECULAR BEAM EPITAXY;

HETEROJUNCTIONS;

EID: 0035399226     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00764-3     Document Type: Conference Paper

References (8)