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Volumn 195, Issue 1-4, 1998, Pages 427-437

Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition

Author keywords

GaAsN; GaInAsN; Low pressure organometallic chemical vapor deposition; Nitrogen incorporation; Photoluminescence

Indexed keywords

ANNEALING; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; PHASE SEPARATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

EID: 0032477218     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00574-0     Document Type: Article
Times cited : (83)

References (34)
  • 25
    • 0346790405 scopus 로고    scopus 로고
    • Private communication
    • C.W. Tu, Private communication.
    • Tu, C.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.