GaInNAs/GaAs quantum dots grown by chemical beam epitaxy

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 561-565

  Makino, S ^a   Miyamoto, T ^a   Kageyama, T ^a   Nishiyama, N ^a   Koyama, F ^a   Iga, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; COMPOSITION EFFECTS; HETEROJUNCTIONS; LASER PULSES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

GALLIUM INDIUM NITROGEN ARSENIDE; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034503932     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00778-8     Document Type: Article

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