Growth characteristics of GaInNAs/GaAs quantum dots by chemical beam epitaxy

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 372-377

  Makino, Shigeki ^a   Miyamoto, Tomoyuki ^a   Ohta, Masataka ^a   Kageyama, Takeo ^a   Ikenaga, Yoshihiko ^a   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Low dimensional structures; A3. Chemical beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CHEMICAL BEAM EPITAXY; COMPOSITION; NITROGEN; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

GROWTH TEMPERATURE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037380530     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02181-4     Document Type: Conference Paper

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