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Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 506-515

Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy

(6) Spruytte, S G a Larson, M C b,c Wampler, W d Coldren, C W a,b,c Petersen, H E b Harris, J S a

a Stanford University (United States)

b LAWRENCE LIVERMORE NATIONAL LABORATORY (United States)

c JDS UNIPHASE (United States)

d SANDIA NATIONAL LABORATORIES (United States)

Author keywords

A1. Characterization; A1. Defects; A1. Diffusion; A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

ANNEALING; CONTINUOUS WAVE LASERS; INTERDIFFUSION (SOLIDS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA SOURCES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR LASERS; SUBSTRATES;

ELEMENTAL SOLID SOURCE MOLECULAR BEAM EPITAXY; PLASMA CELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035399406 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00757-6 Document Type: Conference Paper

Times cited : (125)

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