Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers

Electronics Letters

Volumn 38, Issue 6, 2002, Pages 277-278

  Ha, W ^a   Gambin, V ^a   Wistey, M ^a   Bank, S ^a   Yuen, H ^a   Kim, S ^b   Harris Jr , J S ^a  

^a STANFORD UNIVERSITY   (United States)

^b AGILENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LASER PULSES; MICROELECTRONIC PROCESSING; PHOTOLUMINESCENCE; PUMPING (LASER); SEMICONDUCTING GALLIUM ARSENIDE;

IN-PLANE LASERS; OPTICAL METRO AREA NETWORKS; PULSED POWER; SEPARATE CONFINEMENT HETEROJUNCTION;

QUANTUM WELL LASERS;

EID: 0037075613     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020207     Document Type: Article

References (7)

1. 1200 nm GaAs based vertical cavity lasers employing GaInNAs multiple quantum well active region
2. Room-temperature pulsed operation of 1.3 μm GaInNAs/GaAs laser diode
3. GaInNAs: A novel material for long wavelength semiconductor lasers
4. Tunable long-wavelength vertical-cavity lasers: The engine of next generation optical networks?
5. Multiple quantum well GaInNAs/GaNAs ridge-waveguide laser diodes operating out to 1.4 μm
6. Molecular beam epitaxial growth of InGaN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers
7. Mechanism analysis of improved GaInNAs optical properties through thermal annealing