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Journal of Crystal Growth

Volumn 243, Issue 2, 2002, Pages 231-237

Incorporation effects in MOCVD-grown (In)GaAsN using different nitrogen precursors

(5) Ptak, A J a Kurtz, Sarah a Curtis, C a Reedy, R a Olson, J M a

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Arsenates; B1. Nitrides

Indexed keywords

ARSENIC COMPOUNDS; HYDRAZINE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

NITROGEN PRECURSORS;

SEMICONDUCTOR GROWTH;

EID: 0036680317 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)01412-4 Document Type: Article

Times cited : (17)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.