InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency

Electronics Letters

Volumn 38, Issue 19, 2002, Pages 1104-1106

  Kovsh, A R ^a   Maleev, N A ^a   Zhukov, A E ^a   Mikhrin, S S ^a   Vasil'ev, A P ^a   Shernyakov, Yu M ^a   Maximov, M V ^a   Livshits, D A ^a   Ustinov, V M ^a   Alferov, Zh I ^a   Ledentsov, N N ^b   Bimberg, D ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GAIN CONTROL; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

QUANTUM DOT (QD) LASERS;

QUANTUM WELL LASERS;

EID: 0037068705     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020793     Document Type: Article

References (8)

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