Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 75, Issue 4, 1999, Pages 501-503

  Buyanova, I A ^a   Chen, W M ^a   Pozina, G ^a   Bergman, J P ^a   Monemar, B ^a   Xin, H P ^b   Tu, C W ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; LOW TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM THEORY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM NITRIDE ARSENIDE; GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0032621590     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124429     Document Type: Article

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