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Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 456-460

High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy

(4) Toivonen, J a Hakkarainen, T a Sopanen, M a Lipsanen, H a

a AALTO UNIVERSITY (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; LUMINESCENCE OF INORGANIC SOLIDS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; NITROGEN; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING;

GALLIUM ARSENIC NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034511242 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00740-5 Document Type: Article

Times cited : (55)

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