Nitrogen-activated transitions, level repulsion, and band gap reduction in GaAs1-xNx with x < 0.03

Physical Review Letters

Volumn 82, Issue 16, 1999, Pages 3312-3315

  Perkins, J D ^a   Mascarenhas, A ^a   Zhang, Yong ^a   Geisz, J F ^a   Friedman, D J ^a   Olson, J M ^a   Kurtz, Sarah R ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; ENERGY GAP; GALLIUM ALLOYS; NITRIDES; NITROGEN;

ELECTROREFLECTANCE SPECTRA;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032613811     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.82.3312     Document Type: Article

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