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Electronics Letters

Volumn 38, Issue 7, 2002, Pages 322-324

Electrically pumped 10 Gbit/s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region

(5) Ramakrishnan, A a Steinle, G a Supper, D a Degen, C a Ebbinghaus, G a

a INFINEON TECHNOLOGIES AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; ELECTRIC CURRENT MEASUREMENT; METALLORGANIC VAPOR PHASE EPITAXY; MICROELECTRONIC PROCESSING; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

ACTIVE REGION; CONTINUOUS WAVE OUTPUT POWER; THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASERS;

CONTINUOUS WAVE LASERS;

EID: 0037187736 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20020226 Document Type: Article

Times cited : (103)

References (7)

1
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2
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- High-speed 12 × 2.5 Gbit/s parallel optical links (PAROLI) for increased transmission lengths
- Proc. 26th European Conf. on Optical Communication (ECOC 2000), Munich, Germany, 2000
- Schmale, I.¹ Heinemann, M.² Drögemüller, K.³ Kuhl, D.⁴ Blank, J.⁵ Ehlert, M.⁶ Kraeker, T.⁷ Höhn, J.⁸ Klix, D.⁹ Plickert, V.¹⁰ Melchior, L.¹¹ Hildebrandt, P.¹² Leininger, L.¹³ Dröge, E.¹⁴ Kropp, J.-R.¹⁵ Wolf, H.-D.¹⁶ Wipiejewski, T.¹⁷ Johnson, R.¹⁸

3
- 0032690362
- Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelength in the range of 1.28-1.38 μm
- (1999) Electron. Lett. , vol.35 , pp. 571
- Höhnsdorf, F.¹ Koch, J.² Leu, S.³ Stolz, W.⁴ Borchert, B.⁵ Druminski, M.⁶

4
- 0003305209
- Low threshold 1.3 μm InGaAsN vertical cavity surface emitting lasers grown by metalorganic chemical vapor deposition
- (late news)
- (2001) Proc. Lasers and Electro-Optics Society (LEOS 2001), PD1.2, San Diego, CA, USA
- Takeuchi, T.¹ Chang, Y.-L.² Leary, M.³ Tandon, A.⁴ Luan, H.-C.⁵ Bour, D.⁶ Corzine, S.⁷ Twist, R.⁸ Tan, M.⁹

5
- 0035837239
- Data transmission up to 10 Gbit/s with 1.3 μm wavelength InGaAsN VCSELs
- (2001) Electron. Lett. , vol.37 , Issue.10 , pp. 632-634
- Steinle, G.¹ Mederer, F.² Kicherer, M.³ Michalzik, R.⁴ Kristen, G.⁵ Egorov, A.Y.⁶ Riechert, H.⁷ Wolf, H.D.⁸ Ebeling, K.J.⁹

6
- 0008754826
- MOVPE-growth and characterization of metastable (GaIn)(NAs)/GaAs heterostructures for 1.3 μm lasers
- Proc. Int. Symp. Compound Semiconductors (ISCS 2001), Tokyo, Japan, 2001
- Ramakrishnan, A.¹ Ebbinghaus, G.² Stolz, W.³

7
- 0032477128
- Investigations of GaInNAs bulk layers and GaInNAs multiple quantum well structures grown using tertiary butyl arsine (TBAs) and 1,1-dimethyl hydrazine (uDMHy)
- (1998) J. Crystal Growth , vol.195 , pp. 391
- Hoehnsdorf, F.¹ Koch, J.² Gerd, C.A.³ Stolz, W.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.