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Volumn , Issue , 2003, Pages 460-463
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Thermal annealing effect on self-assembled GaInNAs/GaAs quantum dots grown by chemical beam epitaxy
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CHEMICAL BEAM EPITAXY;
CRYSTAL STRUCTURE;
HIGH TEMPERATURE EFFECTS;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM COMPOUNDS;
CHEMICAL LASERS;
EPITAXIAL GROWTH;
GALLIUM ALLOYS;
GALLIUM ARSENIDE;
GALLIUM NITRIDE;
GROWTH (MATERIALS);
INDIUM;
INDIUM PHOSPHIDE;
LASER BEAMS;
MOLECULAR BEAMS;
NANOCRYSTALS;
OPTICAL MATERIALS;
QUANTUM WELL LASERS;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR QUANTUM DOTS;
SEMICONDUCTOR QUANTUM WELLS;
SUBSTRATES;
BLUE SHIFT;
PHOTOLUMINESCENCE INTENSITY;
THERMAL ANNEALING EFFECT;
SEMICONDUCTOR QUANTUM DOTS;
QUANTUM DOT LASERS;
GAAS SUBSTRATES;
LONG WAVELENGTH LASERS;
MAXIMUM INTENSITIES;
MOLECULAR BEAM EPITAXIAL GROWTH;
NOVEL MATERIAL SYSTEM;
PEAK WAVELENGTH;
THERMAL ANNEALING EFFECTS;
THERMAL-ANNEALING;
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EID: 0038487165
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (4)
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References (17)
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