Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers

Applied Physics Letters

Volumn 83, Issue 22, 2003, Pages 4524-4526

  Zhang, X Q ^a,b,d   Ganapathy, S ^a,b   Suemune, I ^a,b   Kumano, H ^a,b   Uesugi, K ^a,b   Nabetani, Yoichi ^c   Matsumoto, Takashi ^c  

^a HOKKAIDO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF YAMANASHI   (Japan)

^d BEIJING JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; STRAIN; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

BEAM EQUIVALENT PRESSURES; INDIUM ARSENIDE; STRAIN COMPENSATING LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0348107242     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1629803     Document Type: Article

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