Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy)

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 391-396

  Hohnsdorf F ^a   Koch, J ^a   Agert, C ^a   Stolz, W ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

(GaIn)(NAs); Dimethylhydrazine; High resolution X ray diffraction; Metalorganic vapour phase epitaxy (MOVPE); Tertiarybutyl arsine

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; MORPHOLOGY; PARTIAL PRESSURE; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SURFACE PROPERTIES; X RAY CRYSTALLOGRAPHY;

DIMETHYLHYDRAZINE; TERTIARYBUTYLARSINE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032477128     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00651-4     Document Type: Article

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