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Journal of Materials Science: Materials in Electronics

Volumn 14, Issue 5-7, 2003, Pages 267-270

Misfit dislocations in GaAsN/GaAs interface

(10) Toivonen, J a Tuomi, T b Riikonen, J b Knuuttila, L b Hakkarainen, T b Sopanen, M b Lipsanen, H b McNally, P J c Chen, W c Lowney, D c

a UNIVERSITY OF TURKU (Finland)

b AALTO UNIVERSITY (Finland)

c DUBLIN CITY UNIVERSITY (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRACK INITIATION; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; RELAXATION PROCESSES; X RAY DIFFRACTION ANALYSIS;

EPILAYERS; SYNCHROTRON X RAY TOPOGRAPHY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0038825785 PISSN: 09574522 EISSN: None Source Type: Journal
DOI: 10.1023/A:1023999106469 Document Type: Article

Times cited : (10)

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