Effect of post-growth laser treatment on optical properties of Ga(In)NAs quantum wells

IEE Proceedings: Optoelectronics

Volumn 150, Issue 1, 2003, Pages 68-71

  Toivonen, J ^a   Hakkarainen, T ^a   Sopanen, M ^a   Lipsanen, H ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; IRRADIATION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE MEASUREMENT; THERMOCOUPLES; X RAY DIFFRACTION ANALYSIS;

LASER TREATMENT; PHOTOLUMINESENCE MEASUREMENT; SEMICONDUCTING GALLIUM INDIUM NITROGEN ARSENIDE;

LASER BEAM EFFECTS;

EID: 0037307177     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20030052     Document Type: Article

References (18)

1. 3', Appl. Phys. Lett., 1993, 62, (12), pp. 1396-1398
2. Kondow, M.; Uomi, K., Niwa, A., Kitatani, T., Watahiki, S., and Yazawa, Y.: 'GaInNAs: a novel material for long-wavelength-range laser diodes with excellent high-temperature performance', Jpn. J. Appl. Phys. I, Regul. Pap. Short Notes, 1996, 35, (2B), pp. 1273-1275
3. Fisher, M., Gollub, D., and Forchel, A.: '1.3 μm GaInAsN laserdiodes with improved high temperature performance', Jpn. J. Appl. Phys. I, Regul. Pap. Short Notes, 2002, 41, (2B), pp. 1162-1163
4. Friedman, D.J., Geisz, J.F., Kurtz, S.R., and Olson, J.M.: '1-eV solar cells with GaInNAs active layer', J. Cryst. Growth, 1998, 195, (1-4), pp. 409-415
5. Chang, P.C., Baca, A.G., Li, N.Y., Sharps, P.R., Hou, H.Q., Laroche, J.R., and Ren, F.: 'InGaAsN/AlGaAs p-n-p heterojunction bipolar transistor'. Appl. Phys. Lett., 2000, 76, (19), pp. 2788-2790
6. 1-x/GaAs quantum wells', Phys. Rev. B, 2000, 63, (3), pp. 33303-(1-4)
7. Krispin, P., Spruytte, S.G., Harris, J.S., and Ploog, K.H.: 'Admittance dispersion of n-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy', J. Appl. Phys., 2001, 90, (5), pp. 2405-2410
8. x layers: Influence of post-growth treatments', Appl. Phys. Lett., 1998, 72, (12), pp. 1409-1411
9. Kurtz, S., Webb, J., Gedvilas, L., Friedman, D., Geisz, J., Olson, J., King, R., Joslin, D., and Karam, N.: 'Structural changes during annealing of GaInAsN', Appl. Phys. Lett., 2001, 78, (6), pp. 748-750
10. Spruytte, S.G., Coldren, C.W., Harris, J.S., Wampler, W., Krispin, P., Ploog, K., and Larson, M.C.: 'Incorporation of nitrogen in nitride-arsenides: origin of improved luminescence efficiency after anneal', J. Appl. Phys., 2001, 89, (8), pp. 4401-4406
11. Hakkarainen, T., Toivonen, J., Sopanen, M., and Lipsanen, H.: 'GaInNAs quantum well structures for 1.55 μm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy', J. Cryst. Growth, 2002, 234, pp. 631-636
12. Toivonen, J., Hakkarainen, T., Sopanen, M., and Lipsanen, H.: 'High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy', J. Cryst. Growth, 221, pp. 456-460
13. Buyanova, I.A., Chen, W.M., Pozina, G., Bergman, J.P., Monemar, B., Xin, H.P., and Tu, C.W.: 'Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy', Appl. Phys. Lett., (1999), 75, (4), pp. 501-503
14. 1-x quantum well structures grown by migration-enhanced epitaxy', J. Cryst. Growth, 2002, 242, pp. 29-34
15. Klar, P.J., Grüning, H., Koch, J., Schäfer, S., Volz, K., Stolz, W., Heimbrodt, W., Kamal Saadi, A.M., Lindsay, A., and O'Reilly, E.P.: '(Ga,In)(N,As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen', Phys. Rev. B, 2001, 64, (12), pp. 121203-(1-4)
16. Kim, K., and Zunger, A.: 'Spatial correlations in GaInAsN alloys and their effects on band-gap enhancement and electron localization', Phys. Rev. Lett., 2001, 86, (12), pp. 2609-2612
17. Shinozuka, Y.; 'Mechanisms of capture- and recombination-enhanced defect reactions in semiconductors', Physica B, 2001, 308-310, pp. 506-509
18. Plaine, G., Asplund, C., Sundgren, P., Mogg, S., and Hammar, M.: 'Low-temperature metal-organic vapor-phase epitaxy growth and performance of 1.3-μm GaInNAs/GaAs single quantum well lasers', Jpn. J. Appl. Phys. 1, Regul. Pap. Short Notes, 2002, 41, (2B), pp. 1040-1042