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Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 143-147

Optical properties of GaNAs/GaAs structures

(7) Buyanova, I A a Chen, W M a Pozina, G a Hai, P N a Monemar, B a Xin, H P b Tu, C W b

a LINKÖPING UNIVERSITY (Sweden)

b UNIVERSITY OF CALIFORNIA (United States)

Author keywords

Defect; Disorder; GaNAs; Localization; Photoluminescence; Recombination

Indexed keywords

DEFECTS; ENERGY GAP; EXCITONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPY;

TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035933081 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(00)00669-3 Document Type: Article

Times cited : (14)

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