Optical characterization of the "E2" deep level in GaN

Applied Physics Letters

Volumn 74, Issue 4, 1999, Pages 543-545

  Hacke, P ^a,b   Ramvall, P ^a   Tanaka, S ^a   Aoyagi, Y ^a   Kuramata, A ^b   Horino, K ^b   Munekata, H ^c  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; ENERGY GAP; EPITAXIAL GROWTH; OPTICAL PROPERTIES; PHONONS; PHOTOIONIZATION; THERMAL EFFECTS;

BAND GAP; FRANCK-CONDON PARAMETER; OPTICAL CROSS SECTION; SEMICONDUCTING GALLIUM NITRIDE; THERMOIONIZATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033601589     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123180     Document Type: Article

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