Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 20, 1999, Pages 13176-13183

  Reshchikov, M A ^a,b   Yi, G C ^a   Wessels, B W ^a  

^a Northwestern University   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000782597     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.13176     Document Type: Article

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