Deep acceptors trapped at threading-edge dislocations in GaN

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 19, 1998, Pages 12571-12574

  Elsner, J ^a,b   Jones, R ^a   Heggie, M I ^c   Sitch, P K ^b   Haugk, M ^b   Frauenheim, T ^b   Oberg S ^d   Briddon, P R ^e  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^c UNIVERSITY OF SUSSEX   (United Kingdom)

^d LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^e NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000058033     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.12571     Document Type: Article

References (25)

1. T. Ogino and M. Aoki, Jpn. J. Appl. Phys. 19, 2395 (1980).
2. E. R. Glaser et. al Phys. Rev. B 51, 13 326 (1995).
3. M. Godlewski et. al Mater. Sci. Forum 258-263, 1149 (1997).
4. F. A. Ponce, D. P. Bour, W. Gotz, and P. J. Wright, Appl. Phys. Lett. 68, 57 (1996). Recent combined cathodoluminescence and atomic force microscopy points to threading dislocations as a source for these centers (Ref. 5).
5. S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, Appl. Phys. Lett. 70, 420 (1997).
6. X. H. Wu, L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 80, 3228 (1996).
7. X. J. Ning, F. R. Chien, and P. Pirouz, J. Mater. Res. 11, 580 (1996).
8. F. A. Ponce, D. Cherns, W. T. Young, and J. W. Steeds, Appl. Phys. Lett. 69, 770 (1996).
9. J. Elsner, R. Jones, P. K. Sitch, V. D. Porezag, M. Elstner, Th. Frauenheim, M. I. Heggie, S. Öberg, and P. R. Briddon, Phys. Rev. Lett. 79, 3672 (1997).
10. Y. Xin, S. J. Pennycook, N. D. Browning, P. D. Nelist, S. Sivananthan, F. Omnès, B. Beaumont, J.-P. Faurie, and P. Gibart, Appl. Phys. Lett. 72, 2680 (1998).
11. K. Saarinen et. al Phys. Rev. Lett. 79, 3030 (1997).
12. J. Neugebauer and C. G. Van de Walle, Appl. Phys. Lett. 69, 503 (1996).
13. C. Wetzel et. al Phys. Rev. Lett. 78, 3923 (1997).
14. C. Wetzel et. al in Proceedings of the 23rd International Conference on the Physcs of Semiconductors Vols. 1-4, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 2929.
15. P. Perlin et. al in Nitride Semiconductors, edited by F. A. Ponce, T. D. Moustakas, I. Akasaki and B. A. Monemar, MRS Symposia Proceedings No. 449 (Materials Research Society, Pittsburgh, 1997), p. 519.
16. C. G. Van de Walle and J. Neugebauer, Mater. Sci. Forum 258-263, 19 (1997).
17. T. Mattila and R. M. Nieminen, Phys. Rev. B 55, 9571 (1997).
18. R. A. Youngman and J. H. Harris, J. Am. Ceram. Soc. 73, 3238 (1990).
19. A. D. Westwood et. al J. Mater. Res. 10, 1270 (1995).
20. R. Jones, Philos. Trans. R. Soc. London, Ser. A 350, 189 (1995).
21. D. Porezag, Th. Frauenheim, Th. Köhler, G. Seifert, and R. Kaschner, Phys. Rev. B 51, 12 947 (1995).
22. J. Elsner, M. Haugk, G. Jungnickel, and Th. Frauenheim, Solid State Commun. 106, 739 (1998).
23. M. Elstner, D. Porezag, G. Jungnickel, J. Elsner, M. Haugk, Th. Frauenheim, S. Shuhai, and G. Seifert, Phys. Rev. B 58, 7260 (1998).
24. J. Neugebauer and C. G. Van de Walle, Festkoerperprobleme 35, 25 (1996).
25. J. E. Northrup and J. Neugebauer, Phys. Rev. B 53, R10 477 (1996).