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Volumn 69, Issue 4, 1996, Pages 503-505

Gallium vacancies and the yellow luminescence in GaN

Author keywords

[No Author keywords available]

Indexed keywords


EID: 85010812746     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117767     Document Type: Article
Times cited : (1120)

References (16)
  • 8
    • 85024789948 scopus 로고
    • edited by E. Kaxiras, J. Joannopoulos, P. Vashishta, and R. K. Kalia (Materials Research Society, Pittsburgh, Pennsylvania)
    • J. Neugebauer and C. G. Van de Walle, in MRS Proceedings, edited by E. Kaxiras, J. Joannopoulos, P. Vashishta, and R. K. Kalia (Materials Research Society, Pittsburgh, Pennsylvania, 1995), Vol. 408.
    • (1995) MRS Proceedings , vol.408
    • Neugebauer, J.1    Van de Walle, C.G.2
  • 9
    • 85024793235 scopus 로고
    • edited by R. D. Dupuis, F. A. Ponce, J. A. Edmond, and S. Nakamura (MRS Symposia Proceedings, World Scientific, Singapore,)
    • X. Zhang, P. Kung, and M. Razeghi, in Gallium Nitride and Related Materials, edited by R. D. Dupuis, F. A. Ponce, J. A. Edmond, and S. Nakamura (MRS Symposia Proceedings, World Scientific, Singapore, 1995), Vol. 395.
    • (1995) Gallium Nitride and Related Materials , vol.395
    • Zhang, X.1    Kung, P.2    Razeghi, M.3
  • 14
    • 3142583269 scopus 로고
    • These conclusions agree with other first-principles calculations by, edited by D. J. Lockwood (World Scientific, Singapore
    • These conclusions agree with other first-principles calculations by P. Boguslawski, E. Briggs, and J. Bernholc, in The Physics of Semiconductors, edited by D. J. Lockwood (World Scientific, Singapore, 1994), 2331.
    • (1994) The Physics of Semiconductors , pp. 2331
    • Boguslawski, P.1    Briggs, E.2    Bernholc, J.3
  • 16
    • 85024808201 scopus 로고
    • edited by R. K. Watts (Wiley, New York, ff.
    • Point Defects in Crystals, edited by R. K. Watts (Wiley, New York, 1977), 248ff.
    • (1977) Point Defects in Crystals , pp. 248


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.