Electronic and structural properties of GaN grown by hydride vapor phase epitaxy

Applied Physics Letters

Volumn 69, Issue 2, 1996, Pages 242-244

  Gotz W ^a   Romano, L T ^a   Krusor, B S ^a   Johnson, N M ^a   Molnar, R J ^b  

^a PALO ALTO RESEARCH CENTER   (United States)

^b MIT LINCOLN LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000715187     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117937     Document Type: Article

References (10)

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