Values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices

Solid-State Electronics

Volumn 44, Issue 2, 2000, Pages 221-228

  Bandic Z Z ^a   Bridger, P M ^a   Piquette, E C ^a   McGill, T C ^a  

^a California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON BEAMS; ENERGY GAP; HETEROJUNCTION BIPOLAR TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; THYRISTORS; VAPOR PHASE EPITAXY;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; HALIDE VAPOR PHASE EPITAXY; HIGH VOLTAGE STANDOFF LAYERS; MINORITY CARRIER DIFFUSION LENGTHS; MINORITY CARRIER LIFETIMES; RECOMBINATION LIFETIMES; WIDE BANDGAP SEMICONDUCTORS;

CARRIER MOBILITY;

EID: 0034140699     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00227-0     Document Type: Article

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