Deep electronic gap levels induced by isovalent P and As impurities in GaN

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 3, 1998, Pages 1367-1373

  Mattila, T ^a   Zunger, Alex ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000971269     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.1367     Document Type: Article

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