메뉴 건너뛰기




Volumn 70, Issue 19, 1997, Pages 2577-2579

Small valence-band offsets at GaN/InGaN heterojunctions

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000237514     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118924     Document Type: Article
Times cited : (140)

References (18)
  • 4
    • 0028732312 scopus 로고
    • Diamond, SiC and Nitride Wide Bandgap Semiconductors, edited by C. H. Carter Jr., G. Gildenblat, S. Nakamura, and R. J. Nemanich, Materials Research Society, Pittsburgh, PA
    • E. A. Albanesi, W. R. L. Lambrecht, and B. Segall, in Diamond, SiC and Nitride Wide Bandgap Semiconductors, edited by C. H. Carter Jr., G. Gildenblat, S. Nakamura, and R. J. Nemanich, Materials Research Society Symposia Proceedings (Materials Research Society, Pittsburgh, PA, 1994), Vol. 339, p. 607.
    • (1994) Materials Research Society Symposia Proceedings , vol.339 , pp. 607
    • Albanesi, E.A.1    Lambrecht, W.R.L.2    Segall, B.3
  • 6
    • 85033180089 scopus 로고    scopus 로고
    • note
    • v at a heterojunction A/B as a positive value if the valence-band maximum (VBM) in B is higher in energy than the VBM in A.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.