Yellow luminescence and related deep levels in unintentionally doped gan films

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 15, 1999, Pages 9748-9751

  Tisch, U ^b   Salzman, J ^b   Segal, G ^a   Rosenwaks, Y ^a   Shapira, Yoram ^a  

^a TEL AVIV UNIVERSITY   (Israel)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001257733     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.9748     Document Type: Article

References (28)

1. S. Nakamura and G. Fasol, The Blue Laser-Diode—GaN Based Light Emitters and Lasers (Springer-Verlag, Berlin, 1997);
2. F. A. Ponce and D P. Bour, Nature (London)386, 351 (1997).
3. S. N. Mohammed, A A. Salvador, and H. Morkoç, Proc. IEEE83, 1306 (1995).
4. T. Ogino and M. Aoki, Jpn. J. Appl. Phys.19, 2395 (1980).
5. S. A. Safvi, N R. Perkins, M N. Horton, R. Matyi, and T F. Kuech, J. Cryst. Growth182, 233 (1997);
6. X. Li and J J. Coleman, Appl. Phys. Lett.70, 438 (1997).
7. See, e.g., E. Calleja, F J. Sánchez, D. Basak, M A. Sánchez-García, E. Muńoz, I. Izpura, F. Calle, J M G. Tijero, J L. Sánches-Rojas, B. Beaumont, P. Lorenzini, and P. Gibrat, Phys. Rev. B55, 4689 (1997), and references therein.
8. E. R. Glaser, T A. Kennedy, K. Doverspike, L B. Rowland, D K. Kaskill, J A. Freitas, M. Asif Kahn, D T. Olson, J N. Kuznia, and D K. Wickenden, Phys. Rev. B51, 13 326 (1995).
9. H. C. Gatos and J. Lagowski, J. Vac. Sci. Technol.10, 130 (1973).
10. L. Kronik and Y. Shapira, Surf. Sci. Rep. (to be published).
11. A. Many, Y. Goldstein, and N B. Grover, Semiconductor Surfaces, 2nd ed (North-Holland, Amsterdam, 1971).
12. Parallel shifts of the entire CPD curve were observed in some samples but never exceeded ∼0.1 V in fresh samples. These residual shifts are attributed to minor variations in the surface dipole contribution to the electron affinity.
13. M. Leibovitch, L. Kronik, E. Fefer, and Y. Shapira, Phys. Rev. B50, 1739 (1994).
14. D. M. Hoffman, D. Kovalev, G. Steude, B K. Meyer, A. Hoffman, L. Eckey, R. Heitz, T. Detchprom, A. Amano, and I. Akasaki, Phys. Rev. B52, 16 702 (1995).
15. P. Perlin, T. Suski, H. Teisseyre, M. Leszczynski, I. Grzegory, J. Jun, S. Porowski, P. Boguslawski, J. Bernholec, J C. Chervin, A. Polian, and T D. Moustakas, Phys. Rev. Lett.75, 296 (1995);
16. T. Suski, P. Perlin, H. Teisseyre, M. Leszczynski, I. Grzegory, J. Jun, M. Bockowski, S. Porowski, and T D. Moustakas, Appl. Phys. Lett.67, 2188 (1995).
17. P. Hacke and H. Okushi, Appl. Phys. Lett.71, 524 (1997);
18. P. Hacke, H. Okushi, T. Kuroda, T. Detchprohm, K. Hiramatsu, and N. Sawaki, J. Cryst. Growth189/190, 541 (1998).
19. D. C. Reynolds, D C. Look, B. Jogai, J E. Van Nostrand, R. Jones, and J. Jenny, Solid State Commun.106, 701 (1998).
20. H. M. Chen, Y F. Chen, M C. Lee, and M S. Feng, Phys. Rev. B56, 6942 (1997).
21. W. Götz, N M. Johnson, R A. Street, H. Amano, and I. Akasaki, Appl. Phys. Lett.66, 1340 (1995).
22. M. Banas, G. Liu, J. Ramer, K. Zhang, S. Hersee, and K. Malloy, in Gallium Nitride and Related Materials, edited by F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, MRS Symposia Proceedings No. 395 (Materials Research Society, Pittsburg, 1996), p. 583.
23. P. W. Mason, A. Dornen, V. Haerle, F. Scholz, and G D. Watkins, in III-V Nitrides, edited by F. A. Ponce, T. D. Moustakas, L. Akasaki, and B. A. Monemar, MRS Symposia Proceedings No. 449 (Materials Research Society, Pittsburgh, 1997), p. 793.
24. E. F. Schubert, I D. Goepfert, and J M. Redwing, Appl. Phys. Lett.71, 3224 (1997).
25. I. Shalish (unpublished).
26. H. M. Chen, Y F. Chen, M C. Lee, and M S. Feng, J. Appl. Phys.82, 899 (1997).
27. C. V. Reddy, K. Balakrishnan, H. Okumura, and S. Yoshida, Appl. Phys. Lett.73, 244 (1998).
28. E. Muńoz, E. Monroy, J A. Garrido, I. Izpura, F J. Sánchez, M A. Sánchez-García, E. Calleja, B. Beaumont, and P. Gibrat, Appl. Phys. Lett.71, 870 (1997).