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Volumn 73, Issue 19, 1998, Pages 2751-2753

The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN

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EID: 0000262195     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122579     Document Type: Article
Times cited : (210)

References (24)
  • 16
    • 0001009974 scopus 로고    scopus 로고
    • Ultrasoft pseudopotentials for gallium and nitrogen were developed in which the gallium 3d electrons were treated as valence. See
    • Ultrasoft pseudopotentials for gallium and nitrogen were developed in which the gallium 3d electrons were treated as valence. See U. Grossner, J. Furthmüller, and F. Bechstedt, Phys. Rev. B 58, R1722 (1998).
    • (1998) Phys. Rev. B , vol.58 , pp. 1722
    • Grossner, U.1    Furthmüller, J.2    Bechstedt, F.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.