Spatial distribution of electron concentration and strain in bulk GaN single crystals - relation to growth mechanism

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 519-524

  Perlin, P ^a   Suski, T ^a   Polian, A ^a   Chervin, J C ^a   Litwin Staszewska, E ^a   Grzegory, I ^a   Porowski, S ^a   Erickson, J W ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DENSITY MEASUREMENT; FILM GROWTH; IMPURITIES; INFRARED SPECTROSCOPY; NITRIDES; RAMAN SCATTERING; SINGLE CRYSTALS; STRAIN MEASUREMENT;

GALLIUM NITRIDE; RESIDUAL STRAIN DISTRIBUTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030709140     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)