AlN wafers fabricated by hydride vapor phase epitaxy

Materials Research Society Symposium - Proceedings

Volumn 595, Issue , 2000, Pages

  Nikolaev, Andrey ^a   Nikitina, Irina ^a   Zubrilov, Andrey ^a   Mynbaeva, Marina ^a   Melnik, Yuriy ^a   Dmitriev, Vladimir ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL STRUCTURE; LIGHT ABSORPTION; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

ALUMINUM NITRIDE WAFER; HYDRIDE VAPOR PHASE EPITAXY;

FILM GROWTH;

EID: 0033708156     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)