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Applied Physics Letters

Volumn 71, Issue 16, 1997, Pages 2283-2285

Structure of GaN films grown by hydride vapor phase epitaxy

(3) Romano, L T a Krusor, B S a Molnar, R J b

a PALO ALTO RESEARCH CENTER (United States)

b MIT LINCOLN LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000290588 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.120051 Document Type: Article

Times cited : (98)

References (19)

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