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Volumn 75, Issue 16, 1999, Pages 2441-2443

The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000517558     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125041     Document Type: Article
Times cited : (77)

References (11)
  • 1
    • 0001501331 scopus 로고    scopus 로고
    • edited by S. J. Pearton Gordon and Breach, Amsterdam
    • S. Porowski and I. Grzegory, in GaN and Related Materials, edited by S. J. Pearton (Gordon and Breach, Amsterdam, 1997), Vol. 2, p. 295.
    • (1997) GaN and Related Materials , vol.2 , pp. 295
    • Porowski, S.1    Grzegory, I.2
  • 3
    • 0011581263 scopus 로고    scopus 로고
    • edited by J. I. Pankove and T. D. Moustakas Academic, San Diego
    • T. Suski and P. Perlin, in Gallium Nitride (GaN) 1, edited by J. I. Pankove and T. D. Moustakas (Academic, San Diego, 1998), Vol. 50, p. 279.
    • (1998) Gallium Nitride (GaN) 1 , vol.50 , pp. 279
    • Suski, T.1    Perlin, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.