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Applied Physics Letters

Volumn 73, Issue 22, 1998, Pages 3253-3255

Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy

(7) Saarinen, K a Seppala P a Oila, J a Hautojarvi P a Corbel, C a Briot, O b Aulombard, R L b

a AALTO UNIVERSITY (Finland)

b UNIV MONTPELLIER (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRIC PROPERTIES; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; OPTICAL PROPERTIES; POSITRONS; SPECTROSCOPY; STOICHIOMETRY; TEMPERATURE;

ANNIHILATION RADIATION; MOLAR RATIO; POSITRON ANNIHILATION SPECTROSCOPY; VACANCY DEFECTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032583019 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.122735 Document Type: Article

Times cited : (101)

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