Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy

Solid-State Electronics

Volumn 44, Issue 12, 2000, Pages 2225-2232

  Yun, F ^a   Reshchikov, M A ^a   Jones, K ^a   Visconti, P ^a   Morkoc H ^a   Park, S S ^b   Lee, K Y ^b  

^a Virginia Commonwealth University   (United States)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; CARRIER MOBILITY; HALL EFFECT; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY; X RAY CRYSTALLOGRAPHY;

ETCH-PIT DENSITY; HALL MOBILITY; HYDRIDE VAPOR PHASE EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034499280     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00202-1     Document Type: Article

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