Shallow and deep level defects in GaN

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 443-454

  Gotz, W ^a   Johnson, N M ^a   Bour, D P ^a   Chen, C ^a   Liu, H ^a   Kuo, C ^a   Imler, W ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; TEMPERATURE MEASUREMENT;

BAND GAP; ELECTRON CONCENTRATION; ELECTRON PHOTOEMISSION; ELECTRONIC DEFECTS; GALLIUM NITRIDE; LOW ENERGY ELECTRON BEAM IRRADIATION; OPTICAL THRESHOLD ENERGIES; PHOTOEMISSION CAPACITANCE TRANSIENT SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029746076     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (34)