Reliability studies of AlGaN/GaN high electron mobility transistors

Semiconductor Science and Technology

Volumn 28, Issue 7, 2013, Pages

  Cheney, D J ^a   Douglas, E A ^a   Liu, L ^a   Lo, C F ^a   Xi, Y Y ^a   Gila, B P ^a   Ren, F ^a   Horton, David ^a   Law, M E ^a   Smith, David J ^b   Pearton, S J ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CURRENT-DRIVEN; DEGRADATION MECHANISM; DEVICE FABRICATIONS; GATE METALLIZATION; HIGH-FREQUENCY APPLICATIONS; MITIGATION TECHNIQUES; SOURCE FIELD PLATE;

DEGRADATION; ELECTRIC FIELDS; HIGH ELECTRON MOBILITY TRANSISTORS; TESTING;

GALLIUM NITRIDE;

EID: 84879528477     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/7/074019     Document Type: Article

References (62)

1. Meneghesso G, Verzellesi G, Danesin F, Rampazzo F, Zanoni F, Tazzoli A, Meneghini M and Zanoni E 2008 IEEE Trans. Device Mater. Reliab. 8 332
2. Singhal S, Roberts J C, Rajagopal P, Li T, Hanson A W, Therrien R, Johnson J W, Kizilyalli I C and Linthicum K J 2006 Proc. 44th Annu. IEEE Int. Reliability Physics Symp. pp 95-8
3. Sozza A, Dua C, Morvan E, Grimber B and Delage S L 2005 Microelectron. Reliab. 45 1617 (Pubitemid 41231840)
4. Zanoni E et al 2009 European Microwave Integrated Circuits Conf. pp 212-7
5. Rivera C 2009 Appl. Phys. Lett. 94 053501
6. Dammann M, Leuther A, Benkhelifa F, Feltgen T and Jantz W 2003 Phys. Status Solidi a 195 81
7. Sozza A, Dua C, Morvan E, Grimber B and Delage S L 2005 Microelectron. Reliab. 45 1617 (Pubitemid 41231840)
8. Piazza M, Dua C, Oualli M, Morvan E, Carisetti D and Wyczisk F 2009 Microelectron. Reliab. 49 1222
9. Chowdhury U et al 2008 IEEE Electron Device Lett. 29 1098
10. del Alamo J A and Joh J 2009 Microelectron. Reliab. 49 1200
11. Joh J and del Alamo J A 2006 IEDM: Int. Electron Devices Meeting pp 1-4
12. Faqir M, Verzellesi G, Chini A, Fantini F, Danesin F, Meneghesso G, Zanoni E and Dua C 2008 IEEE Trans. Device Mater. Reliab. 8 240
13. Sarua A 2006 Appl. Phys. Lett. 88 103502
14. Meneghesso G 1997 J. Appl. Phys. 82 5547
15. Uren M J et al 2006 1st European Microwave Integrated Circuits Conf. pp 65-8
16. Buchta M, Beilenhoff K, Blanck H, Thorpe J, Behtash R, Heckmann S, Jung H, Ouarch Z and Camiade M 2010 Int. Microwave and Millimeter Wave Technology Conf. pp 488-91
17. Mastro M A, LaRoche J R, Bassim N D and Eddy C R 2005 Microelectron. J. 36 705 (Pubitemid 41119143)
18. Schroder D K 2006 Semiconductor Material and Device Characterization 3rd edn (Piscataway, NJ: IEEE Press)
19. Oda O 2007 Compound Semiconductor bulk Materials and Characterization (Singapore: World Scientific)
20. Brillson L 2001 J. Vac. Sci. Technol. B 19 1762 (Pubitemid 33008421)
21. Micovic M et al 2006 IEDM: Int. Electron Devices Meeting pp 1-3
22. Arulkumaran S 2002 Appl. Phys. Lett. 80 2186 (Pubitemid 34635964)
23. Vitusevich S A et al 2003 Appl. Phys. Lett. 82 743
24. Vitusevich S A, Kurakin A M, Klein N, Petrychuk M V, Naumov A V and Belyaev A E 2008 IEEE Trans. Device Mater. Reliab. 8 543
25. Chou Y C et al 2004 Microelectron. Reliab. 44 1033
26. Kuball M 2003 Appl. Phys. Lett. 82 124
27. Batten T, Manoi A, Uren M J, Martin T and Kuball M 2010 J. Appl. Phys. 107 074502
28. Batten T, Pomeroy J W, Uren M J, Martin T and Kuball M 2009 J. Appl. Phys. 106 094509
29. Kim J, Freitas J A, Mittereder J, Fitch R, Kang B S, Pearton S J and Ren F 2006 Solid-State Electron 50 408 (Pubitemid 44382502)
30. Chih-Yang C et al 2011 IEEE Trans. Device Mater. Reliab. 11 187
31. Montes-Bajo M, Hodges C, Uren M J and Kuball M 2012 Appl. Phys. Lett. 101 033508
32. Meneghini M, Stocco A, Bertin M, Marcon D, Chini A, Meneghesso G and Zanoni E 2012 Appl. Phys. Lett. 100 033505
33. Marko P, Alexewicz A, Hilt O, Meneghesso G, Zanoni E, Würfl J, Strasser G and Pogany D 2012 Appl. Phys. Lett. 100 143507
34. Marcon D et al 2010 IEDM: IEEE Int. Electron Devices Meeting pp 20.3.1-20.3.4
35. Coffie R, Chen Y, Smorchkova I P, Heying B, Gambin V, Sutton W, Chou Y, Luo W B, Wojtowicz M and Oki A 2007 Proc. 45th IEEE Int. Reliability Physics Symp. pp 568-9
36. Demirtas S and del Alamo J A 2010 Microelectron. Reliab. 50 758
37. Joh J, del Alamo J A and Jimenez J 2008 IEEE Electron Device Lett. 29 665
38. Joh J and del Alamo J A 2008 IEEE Electron Device Lett. 29 287
39. Joh J, Gao F, Palacios T and del Alamo J A 2010 Microelectron. Reliab. 50 767
40. Lo C-F et al 2011 Electrochem. Solid-State Lett. 14 H264
41. Douglas E A et al 2011 Microelectron. Reliab. 51 207
42. Gao F, Lu B, Li L, Kaun S, Speck J S, Thompson C V and Palacios T 2011 Appl. Phys. Lett. 99 223506
43. Meneghini M, Stocco A, Bertin M, Marcon D, Chini A, Meneghesso G and Zanoni E 2012 Appl. Phys. Lett. 100 033505
44. Chini A, Esposto M, Meneghesso G and Zanoni E 2009 Electron. Lett. 45 426
45. Zanoni E, Danesin F, Meneghini M, Cetronio A, Lanzieri C, Peroni M and Meneghesso G 2009 IEEE Electron Device Lett. 30 427
46. Ivo P, Glowacki A, Pazirandeh R, Bahat-Treidel E, Lossy R, Wurfl J, Boit C and Trankle G 2009 IEEE Int. Reliability Physics Symp. pp 71-5
47. Beechem T, Christensen A, Graham S and Green D 2008 J. Appl. Phys. 103 124501
48. Joh J, Ling X and del Alamo J A 2007 Int. Electron Devices Meeting pp 385-8
49. Joh J, del Alamo J A, Langworthy K, Xie S and Zheleva T 2011 Microelectron. Reliab. 51 201
50. http://swamp.mse.ufl.edu/floops.html.
51. Johnson M R, Cullen D A, Liu L, Kang T S, Ren F, Chang C Y, Pearton S J, Jang, Johnson J W and Smith D J 2012 J. Vac. Sci. Technol. B 30 062204
52. Tapajna T, Kaun S W, Wong M H, Gao F, Palacios T, Mishra U K, Speck J S and Kuball M 2011 Appl. Phys. Lett. 99 223501
53. Guo J D, Pan F M, Feng M S, Guo R J, Chou P F and Chang C Y 1996 J. Appl. Phys. 80 1623
54. Miura N, Nanjo T, Suita M, Oishi T, Abe Y, Ozeki T, Ishikawa H, Egawa T and Jimbo T 2004 Solid-State Electron. 48 689
55. Douglas E A et al 2012 Microelectron. Reliab. 52 23
56. Jung H, Behtash R, Thorpe J R, Riepe K, Bourgeois F, Blanck H, Chuvilin A and Kaiser U 2009 Phys. Status Solidi c 6 S976
57. Mattila T and Nieminen R M 1996 Phys. Rev. B 54 16676
58. Holzworth M R, Rudawski N, Pearton S J, Jones K S, Lu L, Kang T S, Ren F and Johnson J W 2011 Appl. Phys. Lett. 98 122103
59. Liu L et al 2011 J. Vac. Sci. Technol. B 29 032204
60. Chini A, Di Lecce V, Esposto M, Meneghesso G and Zanoni E 2009 European Microwave Integrated Circuits Conf. pp 132-5
61. Douglas E A, Pearton S J, Poling B, Via G D, Liu L and Ren F 2011 Electrochem. Solid-State Lett. 14 H464
62. Joh J and del Alamo J A 2012 Microelectron. Reliab. 52 33.