A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

Microelectronics Reliability

Volumn 50, Issue 6, 2010, Pages 767-773

  Joh, Jungwoo ^a   Gao, Feng ^a   Palacios, Tomás ^a   del Alamo, Jesús A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Critical voltage; Degradation; GaN; HEMT; Modeling; Reliability

Indexed keywords

CRITICAL VOLTAGES; DEFECT FORMATION; DEGRADATION PROCESS; ELASTIC ENERGY; ELECTRICAL DEGRADATION; ELECTRICAL RELIABILITY; FIRST-ORDER MODELS; GAN HEMTS; GAN HIGH ELECTRON MOBILITY TRANSISTORS; HIGH-VOLTAGE STRESS; INVERSE PIEZOELECTRIC EFFECTS; IRREVERSIBLE DEGRADATION; MECHANICAL STRESS;

DEGRADATION; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; PIEZOELECTRICITY; RELIABILITY; STRESSES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77953137807     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.02.015     Document Type: Article

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