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Volumn 107, Issue 7, 2010, Pages

Temperature analysis of AlGaN/GaN based devices using photoluminescence spectroscopy: Challenges and comparison to Raman thermography

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; CORRESPONDING SOLUTIONS; TEMPERATURE ANALYSIS; THERMAL BOUNDARY RESISTANCE; THERMAL MODELING; VERTICAL TEMPERATURE DISTRIBUTION;

EID: 77951615035     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3359651     Document Type: Article
Times cited : (31)

References (22)
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    • 0036639037 scopus 로고    scopus 로고
    • Optical study of high-biased AlGaN/GaN high-electron-mobility transistors
    • DOI 10.1063/1.1481973
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    • http://www.ansys.com
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    • 79956003382 scopus 로고    scopus 로고
    • A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopy
    • DOI 10.1063/1.1485310
    • C. Y. Fang, C. F. Lin, E. Y. Chang, and M. S. Feng, Appl. Phys. Lett. 0003-6951 80, 4558 (2002). 10.1063/1.1485310 (Pubitemid 34751405)
    • (2002) Applied Physics Letters , vol.80 , Issue.24 , pp. 4558
    • Fang, C.Y.1    Lin, C.F.2    Chang, E.Y.3    Feng, M.S.4
  • 21
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    • 0031-8914,. 10.1016/0031-8914(67)90062-6
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    • Varshni, Y.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.