SCOPUS 정보 검색 플랫폼

Electronics Letters

Volumn 45, Issue 8, 2009, Pages 426-427

Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements

(4) Chini, A a Esposto, M a Meneghesso, G b Zanoni, E b

a UNIVERSITY OF MODENA AND REGGIO EMILIA (Italy)

b UNIVERSITY OF PADOVA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVELS; DEVICE DEGRADATIONS; DLTS; DRAIN CURRENT DISPERSIONS; GAN HEMTS; GAN-HEMT; GATE CURRENTS; REVERSE GATES; STEP STRESS; THERMALLY ACTIVATED;

DEGRADATION; DRAIN CURRENT; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING GALLIUM;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 64549118715 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el.2009.0533 Document Type: Article

Times cited : (47)

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