AlGaN/GaN high electron mobility transistor degradation under on- and off-state stress

Microelectronics Reliability

Volumn 51, Issue 2, 2011, Pages 207-211

  Douglas, E A ^a   Chang, C Y ^a   Cheney, D J ^a   Gila, B P ^a   Lo, C F ^a   Lu, Liu ^a   Holzworth, R ^a   Whiting, P ^a   Jones, K ^a   Via, G D ^b   Kim, Jinhyung ^c   Jang, Soohwan ^c   Ren, Fan ^a   Pearton, S J ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c Dankook University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CRITICAL VOLTAGES; DRAIN BIAS; GATE LENGTH; HIGH-POWER STRESS; LINEAR RELATIONSHIPS; MAXIMUM ELECTRIC FIELD; OFF-STATE STRESS; SCHOTTKY CONTACTS; STRESS CONDITION; SUBMICRON;

BIAS VOLTAGE; DEGRADATION; ELECTRIC FIELDS; ELECTRON MOBILITY; GALLIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79551471797     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.09.024     Document Type: Conference Paper

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