High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

Microelectronics Reliability

Volumn 50, Issue 6, 2010, Pages 758-762

  Demirtas, Sefa ^a   Joh, Jungwoo ^a   Alamo, Jesús A del ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Critical voltage; Degradation; GaN on Si HEMT; Reliability; Trapping

Indexed keywords

ALGAN; CONCENTRATION OF; CRITICAL VOLTAGE; CRITICAL VOLTAGES; DEVICE DEGRADATION; GAN HIGH ELECTRON MOBILITY TRANSISTORS; GATE-LEAKAGE CURRENT; HIGH VOLTAGE; INITIAL STRAINS; MAXIMUM DRAIN CURRENT; NONUNIFORM; ORDERS OF MAGNITUDE; SHORT DISTANCES; SI SUBSTRATES; SILICON SUBSTRATES; SOURCE AND DRAIN RESISTANCE; UV ILLUMINATIONS;

DEGRADATION; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; LEAKAGE CURRENTS; SILICON; SILICON CARBIDE; SILICON WAFERS; THRESHOLD VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77953127648     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.02.016     Document Type: Article

References (25)

1. Rajagopal P., Gehrke T., Roberts J.C., Brown J.D., Weeks T.W., Piner E.L., et al. Mater Res Soc Symp Proc 743 3 (2003) L1.2
2. Roberts J.C., Cook Jr. J.W., Rajagopal P., Piner E.L., and Linthicum K. Mater Res Soc Symp Proc 1068 (2008) C06-03
3. Piner EL, Singhal S, Rajagopal P, Therrien R, Roberts JC, Li T, et al. In: Inter elect dev meet; 2006. p. 1-4 .
4. Singhal S, Li T, Chaudhari A, Hanson AW, Therrien R, Johnson JW, et al. In: Rel of comp sem workshop; 2005. p. 135-49.
5. Hikita M, Yanagihara M, Nakazawa K, Ueno H, Hirose Y, Ueda T, et al. In: Inter elect dev meet; 2004. p. 803-6.
6. Chen X., and Uesugi T. Phys Stat Sol (c) 2 7 (2005) 2133-2136
7. Ueda D, Murata T, Hikita M, Nakazawa S, Kuroda M, Ishida H, et al. In: Inter elect dev meet; 2005. p. 377-80.
8. Joh J, del Alamo JA. In: Inter elect dev meet; 2006. p. 1-4.
9. Joh J., and del Alamo J.A. IEEE Electr Dev Lett 29 4 (2008) 287-289
10. del Alamo JA, Joh J. In: 20th Eur symp on the rel of elect dev fail phys and analysis. Microelectron Reliab 2009;49(9-11):1200-6.
11. Joh J, Xia L, del Alamo JA. In: Inter elect dev meet; 2007. p. 385-8.
12. Demirtas S, del Alamo JA. In: Rel of comp sem workshop; 2009. p. 53-6.
13. Demirtas S. Reliability of GaN high electron mobility transistors on silicon substrates. SM thesis, MIT; 2009.
14. Gassoumi M., Bluet J.M., Chekir F., Dermoul I., Maaref H., Guillot G., et al. Mater Sci Eng C 26 (2006) 383-386
15. Marso M., Wolter M., Javorka P., Kordos P., and Luth H. Appl Phys Lett 82 (2003) 633-635
16. Stoklas R., Gregusova D., Novak J., Vescan A., and Kordos P. Appl Phys Lett 93 (2008) 124103
17. Joh J, del Alamo JA. In: Rel of comp sem workshop; 2009. p. 3-6.
18. Bougrioua Z., Moerman I., Nistor L., Van Daele B., Monroy E., Palacios T., et al. Phys Stat Sol (a) 195 1 (2003) 93-100
19. Cheng K., Leys M., Derluyn J., Degroote S., Xiao D.P., Lorenz A., et al. J Cryst Growth 298 (2007) 822-825
20. Maeda N., Nishida T., Kobayashi N., and Tomizawa M. Appl Phys Lett 73 (1998) 1856-1858
21. Cordier Y., Hugues M., Semond F., Natali F., Lorenzini P., Bougrioua Z., et al. J Cryst Growth 278 (2005) 383-386
22. Rashmi, Kranti A., Haldar S., and Gupta R.S. Solid-State Electron 46 5 (2002) 621-630
23. Morkoc H. Handbook of nitride semiconductors and devices. GaN-based optical and electronic devices vol. 3 (2008), Wiley-VCH, Weinheim, Germany
24. Ambacher O., Smart J., Shealy J.R., Weimann N.G., Chu K., Murphy M., et al. J Appl Phys 85 (1999) 3222-3233
25. Demirtas S, del Alamo JA. In: Proceedings of IRPS 2010 conference, May 4; 2010, accepted for publication.