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Electrochemical and Solid-State Letters

Volumn 14, Issue 11, 2011, Pages

Effect of drain bias on degradation of AlGaN/GaN high electron mobility transistors under X-band operation

(6) Douglas, E A a Pearton, S J a Poling, B b Via, G D c Liu, L d Ren, F d

a Department of Materials Science and Engineering ^* (United States)

b Wyle Laboratories (United States)

c AIR FORCE RESEARCH LABORATORY (United States)

d J Crayton Pruitt Family Department of Biomedical Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CURRENT DEGRADATION; DEVICE CHARACTERISTICS; DRAIN BIAS; GATE LENGTH; GATE-LEAKAGE CURRENT; OUTPUT POWER; RAPID DEGRADATION; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SUBMICRON;

CURRENT VOLTAGE CHARACTERISTICS; DC POWER TRANSMISSION; DEGRADATION; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 80053548149 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/2.019111esl Document Type: Article

Times cited : (11)

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