Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 3, 2011, Pages

  Liu, Lu ^a   Kang, Tsung Sheng ^a   Cullen, David A ^b   Zhou, Lin ^b   Kim, Jinhyung ^c   Chang, Chih Yang ^a   Douglas, Erica A ^a   Jang, Soohwan ^c   Smith, David J ^b   Pearton, S J ^a   Johnson, Wayne J ^d   Ren, Fan ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c Dankook University   (South Korea)

^d NITRONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; GALLIUM NITRIDE; PIEZOELECTRICITY; TRANSMISSION ELECTRON MICROSCOPY;

ALGAN LAYERS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CRITICAL VOLTAGES; FIELD PLATES; GATE CONTACT; GATE EDGE; GATE STRESS; INVERSE PIEZOELECTRIC EFFECTS; OFF-STATE STRESS; SOURCE AND DRAINS; SOURCE FIELD PLATE; STEP-STRESS; THIN OXIDE LAYERS; THREADING DISLOCATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79958175626     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3581078     Document Type: Article

References (21)

1. G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, and A. Tazzoli, IEEE Trans. Device Mater. Reliab. 1530-4388 8, 332 (2008). 10.1109/TDMR.2008.923743
2. J. Joh, J. A. del Alamo, and J. Jimenez, IEEE Electron Device Lett. 0741-3106 29, 665 (2008). 10.1109/LED.2008.2000919
3. P. Makaram, J. Joh, J. A. del Alamo, T. Palacios, and C. V. Thompson, Appl. Phys. Lett. 0003-6951 96, 233509 (2010). 10.1063/1.3446869
4. U. Chowdhury, IEEE Electron Device Lett. 0741-3106 29, 1098 (2008). 10.1109/LED.2008.2003073
5. J. Joh and J. A. del Alamo, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2006, 415.
6. P. Saunier, Proceedings on Device Research Conference, 2007 (unpublished), p. 35.
7. J. A. del Alamo and J. Joh, Microelectron. Reliab. 0026-2714 49, 1200 (2009). 10.1016/j.microrel.2009.07.003
8. E. Zanoni, G. Meneghesso, G. Verzellesi, F. Danesin, M. Meneghini, F. Rampazzo, A. Tazzoli, and F. Zanon, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, 381.
9. M. Faqir, G. Verzellesi, G. Meneghesso, E. Zanoni, and F. Fantini, IEEE Trans. Electron Devices 0018-9383 55, 1592 (2008). 10.1109/TED.2008.924437
10. G. Meneghesso, F. Rampazzo, P. Kordoš, G. Verzellesi, and E. Zanoni, IEEE Trans. Electron Devices 0018-9383 53, 2932 (2006). 10.1109/TED.2006.885681 (Pubitemid 46417104)
11. S. Singhal, J. C. Roberts, P. Rajagopal, T. Li, A. W. Hansen, R. Therrien, J. W. Johnson, I. C. Kizilyalli, and K. J. Linthicum, Proceedings of the IEEE International Reliability Physics Symposium, 2006 (unpublished), p. 95.
12. C. Y. Chang, J. Vac. Sci. Technol. B 1071-1023 28, 1044 (2010). 10.1116/1.3491038
13. E. Piner, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2006, 411.
14. V. Kumar, G. Chen, S. Guo, and I. Adesida, IEEE Trans. Electron Devices 0018-9383 53, 1477 (2006). 10.1109/TED.2006.874090 (Pubitemid 43834551)
15. Y. Hori, M. Kuzuhara, Y. Ando, and M. Mizuta, J. Appl. Phys. 0021-8979 87, 3483 (2000). 10.1063/1.372370
16. S. Karmalkar, M. S. Shur, G. Simin, and M. A. Khan, IEEE Trans. Electron Devices 0018-9383 52, 2534 (2005). 10.1109/TED.2005.859568 (Pubitemid 41824832)
17. W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, I. Omura, and T. Ogura, Jpn. J. Appl. Phys., Part 1 0021-4922 43, 2239 (2004). 10.1143/JJAP.43.2239
18. P. Rajagopal, T. Gehrke, J. C. Roberts, J. D. Brown, T. W. Weeks, E. L. Piner, and K. J. Linthicum, Mater. Res. Soc. Symp. Proc. 0272-9172 743, 3 (2003).
19. W. Weeks, E. Piner, T. Gehrke, and K. Linthicum, U.S. Patent 6, 617, 060 (9 September 2003)
20. U.S. Patent 6, 649, 287 (18 November 2003).
21. N. A. Moser, Appl. Phys. Lett. 0003-6951 83, 4178 (2003). 10.1063/1.1628394