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Journal of Applied Physics

Volumn 103, Issue 12, 2008, Pages

Micro-Raman thermometry in the presence of complex stresses in GaN devices

(4) Beechem, T a Christensen, A a Graham, S a Green, D b

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b RFMDR Infrastructure Product Group (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION METHODS; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM; STRESS CONCENTRATION; TEMPERATURE MEASUREMENT; TEMPERATURE MEASURING INSTRUMENTS; TEMPERATURE SENSORS; THERMOMETERS; THREE DIMENSIONAL;

(+ MOD 2N) OPERATION; (ABIOTIC AND BIOTIC) STRESS; (P ,P ,T) MEASUREMENTS; AMERICAN INSTITUTE OF PHYSICS (AIP); ANTI-STOKES; DEVICE OPERATIONS; EXPERIMENTAL METHODS; GALLIUM NITRIDE (GAN); INTENSITY RATIOS; INVERSE PIEZOELECTRIC EFFECTS; MICRO-RAMAN; PEAK POSITIONS; REFERENCE CONDITIONS; STRESS DISTRIBUTIONS; THREE-DIMENSIONAL (3D) FINITE ELEMENT MODELS;

FINITE ELEMENT METHOD;

EID: 46449084328 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2940131 Document Type: Article

Times cited : (77)

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