Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

Microelectronics Reliability

Volumn 51, Issue 2, 2011, Pages 201-206

  Joh, Jungwoo ^a   Alamo, Jesús A Del ^a   Langworthy, Kurt ^b   Xie, Sujing ^c   Zheleva, Tsvetanka ^c  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b UNIVERSITY OF OREGON   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; CRITICAL VOLTAGES; CROSS-SECTIONAL TEM; CRYSTALLOGRAPHIC DEFECTS; CURRENT DEGRADATION; ELECTRICAL DEGRADATION; GAN CAP; GOOD CORRELATIONS; HIGH-VOLTAGE STRESS; IRREVERSIBLE DEGRADATION; MATERIAL DEGRADATION; STRESS VOLTAGES; STRUCTURAL DEGRADATION; TEM ANALYSIS;

DEGRADATION; DRAIN CURRENT; GALLIUM ALLOYS; GALLIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79551474495     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.08.021     Document Type: Conference Paper

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