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Volumn 106, Issue 9, 2009, Pages

Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy

(5) Batten, T a Pomeroy, J W a Uren, M J b Martin, T b Kuball, M a

a UNIVERSITY OF BRISTOL (United Kingdom)

b QINETIQ (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; DRAIN EDGE; GAN LAYERS; GATE CONTACT; MAXIMUM TEMPERATURE RISE; PHONON MODE; POWER DISSIPATION; RAMAN SCATTERING SPECTROSCOPY; SIMULTANEOUS MEASUREMENT; THERMOMECHANICAL SIMULATION;

ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM; THERMAL STRESS; THERMOELASTICITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 70450270578 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3254197 Document Type: Article

Times cited : (65)

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