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Volumn 14, Issue 7, 2011, Pages

Improvement of off-state stress critical voltage by using pt-gated AlGaN/GaN high electron mobility transistors

(11) Lo, Chien Fong a Liu, Lu a Kang, Tsung Sheng a Davies, Ryan a Gila, Brent P a Pearton, S J a Kravchenko, I I b Laboutin, O c Cao, Yu c Johnson, Wayne J c Ren, Fan a

a J Crayton Pruitt Family Department of Biomedical Engineering (United States)

b OAK RIDGE NATIONAL LABORATORY (United States)

c KOPIN CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CRITICAL VOLTAGES; GATE METALLIZATION; GATE VOLTAGES; OFF-STATE STRESS; REVERSE GATE; SCHOTTKY; SHARP CONTRAST;

DEGRADATION; ELECTRON MOBILITY; GALLIUM NITRIDE; METALLIZING; PLATINUM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79959573613 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3578388 Document Type: Article

Times cited : (23)

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