RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements

European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Volumn , Issue , 2009, Pages 132-135

  Chini, Alessandro ^a   Di Lecce, Valerio ^a   Esposto, Michele ^a   Meneghesso, Gaudenzio ^b   Zanoni, Enrico ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DC OPERATION; DC STRESS; DEVICE PERFORMANCE; DLTS; GAN HEMTS; GATE CONTACT; GATE TERMINALS; LOCALIZED DEFECTS; OUTPUT POWER; PHYSICAL MECHANISM; REVERSE BIAS; REVERSE CURRENTS; REVERSE GATE; RF STRESS; STRONG CORRELATION; THERMALLY ACTIVATED;

DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DEGRADATION; ELECTRIC CURRENT MEASUREMENT; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUITS; MICROWAVE INTEGRATED CIRCUITS; MICROWAVES; SEMICONDUCTING GALLIUM;

DRAIN CURRENT;

EID: 72449142096     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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2. Y.-F . Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, P. Parikh, "30 W/mm GaN HEMTs by field plate optimization", IEEE Electron Device Letters, Vol. 25, No. 3, Mar. 2004, pp. 117-119.
3. Joh Jungwoo, J. A. del Alamo, "Critical Voltage dor Electrical Degradation of GaN High-Electron Mobility Transistors", IEEE Electron Device Letters, Vol. 29, No. 4, Apr. 2008, pp. 287-289.
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5. E. Zanoni, F. Danesin, M. Meneghini, A. Cetronio, C. Lanzieri, M. Peroni, G. Meneghesso, "Localized damage in AlGaN/GaN HEMTs induced by reverse bias testing", to be puplished on IEEE Electron Device Letters.
6. Jungwoo Joh and J. A. del Alamo, "Impact of Electrical Degradation on Trapping Characteristics of GaN High Electron Mobility Transistors", IEEE International Electron Devices Meeting, Dec. 2008.