A simple current collapse measurement technique for GaN high-electron mobility transistors

IEEE Electron Device Letters

Volumn 29, Issue 7, 2008, Pages 665-667

  Johwoo, Joh ^a   del Alamo, Jesúls A ^a   Jimenez, Jose ^b  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

Current collapse; GaN; High electron mobility transistor (HEMT); Measurement; Reliability

Indexed keywords

DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING GALLIUM; SULFATE MINERALS; TRANSISTORS;

CURRENT COLLAPSE; DETRAPPING TIME; DEVICE CHARACTERIZATION; DEVICE DEGRADATION; DRAIN CURRENTS; GAN HEMT; HIGH ELECTRON MOBILITY TRANSISTOR (HEMTS); HIGH-FREQUENCY (HF); HIGH-VOLTAGE (HV); MEASUREMENT TECHNIQUES; OUTPUT POWERS; PULSE TECHNIQUES; TRANSIENT CURRENT (IDD);

ELECTRIC CURRENT MEASUREMENT;

EID: 47249152802     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2000919     Document Type: Article

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