메뉴 건너뛰기




Volumn 50, Issue 3, 2006, Pages 408-411

Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique

Author keywords

GaN; HEMT; Raman; Reliability; Temperature

Indexed keywords

GALLIUM NITRIDE; OPTICAL RESOLVING POWER; RAMAN SPECTROSCOPY; RELIABILITY; SEMICONDUCTING GALLIUM COMPOUNDS; TEMPERATURE MEASUREMENT;

EID: 33748643016     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.11.009     Document Type: Article
Times cited : (32)

References (23)
  • 2
    • 33748650159 scopus 로고    scopus 로고
    • Eastman LF, Shealy JR, Tilak V, Smart J, Green B, Prunty T. In: Proc 4th int conf nitride semiconduct conf dig Denver, CO, 2001;16-20 (July):21.
  • 6
    • 33748652778 scopus 로고    scopus 로고
    • Hunter GW, Neudeck PG, Okojie RS, Beheim GM, Thomas V, Chen L et al. In: Proc ECS 01-02, 212 Electrochemical Society, Pennington, NJ; 2002.
  • 14
    • 33748641810 scopus 로고    scopus 로고
    • Kim J, Freitas JA, Jr., Klein PB, Jang S, Ren F, Pearton SJ. Submitted for publication.
  • 17
    • 33748673448 scopus 로고    scopus 로고
    • Nuttinck S, Mukhopadhyay R, Loper C, Singhal S, Harris M, Laskar J. Presented at European Microwave Week 2004, Amsterdam, The Netherlands, 2004.
  • 19
    • 0242365563 scopus 로고    scopus 로고
    • Kaper V, Tilak V, Green B, Prunty T, Smart J, Eastman LF, et al. High Performance Devices, 2002. In: Proc IEEE Lester Eastman Conference on August 6-8;2002:118.
  • 23
    • 33748660534 scopus 로고    scopus 로고
    • Takeda Y, Tabuchi M. Properties, Processing and applications of gallium nitride and related semiconductors. In: Edgar JH, Strite S, Akassaki I, Amano H, Wetzel C, editors. London, UK.: Inst Elect Eng 1999;381.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.