Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique

Solid-State Electronics

Volumn 50, Issue 3, 2006, Pages 408-411

  Kim, Jihyun ^a,d   Freitas Jr , J A ^b   Mittereder, J ^b   Fitch, R ^c   Kang, B S ^d   Pearton, S J ^d   Ren, F ^d  

^a Korea University   (South Korea)

^b NAVAL RESEARCH LABORATORY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d UNIVERSITY OF FLORIDA   (United States)

Author keywords

GaN; HEMT; Raman; Reliability; Temperature

Indexed keywords

GALLIUM NITRIDE; OPTICAL RESOLVING POWER; RAMAN SPECTROSCOPY; RELIABILITY; SEMICONDUCTING GALLIUM COMPOUNDS; TEMPERATURE MEASUREMENT;

ALGAN/GAN STRUCTURES; CALIBRATION CURVES; CONTACT-FREE MEASUREMENT; OPERATION MODES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33748643016     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.11.009     Document Type: Article

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